revision ds 2015 1 222 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 1 of 7 rfmd + triquint = qorvo rfpa5532 wi - fi integrated pa module 4 9 00mhz to 592 5 m hz the rfpa5532 is a three - stage power amplifier (pa) designed for 802.11a/n/ac applications. the integr ated input and output 50? match greatly reduces the layout area, bill of materials and manufacturability cost in the customer application. the pa is optimized to minimize the required external components to maintain linear performance at 3.3v . the rfpa553 2 is manufactured on an advanced ingap heterojunction bipolar transistor (hbt) process and is capable of achieving linear powers up to 2 1 dbm with an evm <1.8% while maintaining excellent power added efficiency. the device is provided in a 4 .0 mm x 4 .0 mm x 0.90 mm package that meets or exceeds the power requirements of ieee802.11a/n/ac wi - fi rf systems . functional block diagram ordering information rfpa5532 sb standard 5 - piece s ample b ag rfpa5532 sq standard 25 - piece s ample b ag rfpa5532 sr standard 100 - piece r eel rfpa5532 tr13 standard 2500 - piece r eel rfpa5532 pc k - 410 fully a ssembled e val uation b oard plus 5 pieces package: qfn , 20 - pin, 4.0mm x 4.0mm x 0.90 mm features p out = 2 1 dbm , 3.3 v, 11ac, 80mhz mcs9 at 1.8% evm p out = 2 2 dbm , 3.3 v, 11n, 20/40mhz mcs7 at 3% evm typical gain = 3 2 db high pae required external components minimized integrated regulator input and output matched to 50? integrated power detector applications customer premise equipment (cpe) wireless access points, gateways routers set - top box applications picocell/femtocell rfpa5532 g n d r f o u t g n d v c c 1 p d e t p a _ e n v c c 2 n c r f i n 1 3 4 5 1 1 1 2 1 3 1 4 1 5 2 r e g u l a t o r 6 7 8 9 1 0 1 6 1 7 1 8 1 9 2 0 n c g n d g n d g n d g n d v c c 3 g n d g n d n c n c n c
revision ds 2015 1 222 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 2 of 7 rfpa5532 rfmd + triquint = qorvo absolute maximum rat ings parameter rating unit dc supply voltage - 0.5 to + 6 v dc dc supply current 1000 ma operating case temperature - 40 to +85 oc storage temperature - 40 to +150 oc maximum tx input power into 50? , 10:1 load for 11a/n/ac (no damage) . + 10 dbm moisture sensitivity level (260c jedec j - std - 020 ) msl 2 caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability . specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. this is an ingap pa designed for high duty cycle applications with tj>30oc over ambient. nominal operating parameters parameter specification unit condition min typ max compliance 802.11a/n/ac operating frequency 5.180 5. 9 25 ghz extended operating frequency 4.900 5.180 ghz power supply v cc 3.0 3.3 3.6 v pa enable - high 1. 7 3.0 revision ds 2015 1 222 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 3 of 7 rfpa5532 rfmd + triquint = qorvo parameter specification unit condition min typ max leakage current 0.2 1 u a rf off; v paen = 0v second harmonic - 4 7 - 40 dbm/mhz p out = 2 4 dbm ; ofdm 6mbps signal. third harmonic - 50 - 4 0 dbm/mhz p out = 2 4 dbm ; ofdm 6mbps signal oob gain - 10 - 5 db 3 .3 - 3.8ghz 7 12 db 7.0 - 15.0 ghz input return loss 12 db output return loss 8 db power detect or range 0. 25 v p out = 3 dbm 0. 5 5 v p out = 2 1 dbm 0. 75 v p out = 2 4 dbm general specifications stability output vswr 6:1 cw signal, no spurious above - 41.25dbm/mhz for non - harmonic related signals output power range 0 24 dbm output p 1db 3 0 dbm cw signal ramp on/off time 200 ns 10 - 90% / 90 - 10% of gain thermal resistance 27 c/w esd hbm 1 500 v eia/jesd22 - 114a; all pins esd cdm 5 00 v jesd22 - c101c; all pins
revision ds 2015 1 222 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 4 of 7 rfpa5532 rfmd + triquint = qorvo timing diagram v cc pa - en time tx rf signal rf / dc power on / off sequence note : observe the timing sequence shown in the diagram above and described below . dc and rf signal levels per data sheet specification td td td td rf on rf off ? apply v cc prior to turning on or pulsing pa enable . ? turn off pa enable prior to turning off v cc . ? turn on pa enable prior to applying rf signal . ? turn off rf signal prior to turning off pa enable .
revision ds 2015 1 222 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 5 of 7 rfpa5532 rfmd + triquint = qorvo rfpa5532 applications schematic pin out paen pdet j 2 rf _ out 50 ? ? strip j 1 rf _ in 50 ? ? strip vcc 2 c 1 2 . 2 uf ( 0402 ) c 3 ? ? ? ? f ( 0402 ) c 5 1 nf ( 0402 ) c 2 2 . 2 uf ( 0402 ) 6 7 8 9 4 3 20 19 18 17 2 1 11 12 13 14 u 1 rfpa 5532 10 15 5 16 c 6 10 pf ( 0402 ) vcc 1 vcc 3 rfpa 5532 schematic c 7 10 pf ( 0402 ) c 8 10 pf ( 0402 )
revision ds 2015 1 222 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 6 of 7 rfpa5532 rfmd + triquint = qorvo package drawing (in mm) pcb patterns (in mm)
revision ds 2015 1 222 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 7 of 7 rfpa5532 rfmd + triquint = qorvo pin names and descriptions pin name description 1 nc not connected internally. it may be left floating or connected to ground. 2 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 3 rfin rf inp ut, internally matched to 50? and dc shorted . external dc blocking capacitor required. 4 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 5 pa en input enable bias voltage (regulated internally) . 6 nc not connected internally. it may be left floating or connected to ground. 7 nc not connected internally. it may be left floating or connected to ground. 8 nc not connected internally. it may be left floating or connected to ground. 9 nc not connected internally. it may be left floating or connected to ground. 10 pdet power detector . p rovides an output voltage proportional to the rf output power level. 11 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 12 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 13 rfout rf out p ut, internally matched to 50? and dc shorted . external dc blocking capacitor required. 14 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 15 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 16 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 17 gnd ground connection. this pin is not connected internally and can be left floating or connected to ground. 18 vcc3 third stage supply voltage 19 vcc2 second stage supply voltage. 20 vcc1 first stage supply voltage. pkg base gnd ground connection. the back side of the package should be connected to the ground plan though as short of a connection as possible. pcb vias under the device are recommended.
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